T1G4020036-FS

時(shí)間：2019-09-12作者：深圳市國宇航芯科技有限公司瀏覽：9

Qorvo's T1G4020036-FS is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Lead-free and ROHS compliant

Evaluation boards are available upon request.




T1G4020036-FS Key Features




Frequency: DC - 3.5 GHz

Output power (P3dB)1: 200W

Linear gain1: 18.1dB

Typical PAE3dB1: 67.6%

Operating voltage: 50 V

CW and Pulse capable




Note: 1: @2.8 GHz Load Pull (Half of device)








深圳市國宇航芯科技有限公司專注于編程FPGA器件等

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